PART |
Description |
Maker |
STP9N60M2 STD9N60M2 |
Extremely low gate charge N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
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STMicroelectronics ST Microelectronics
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S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
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Hamamatsu Photonics
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STQ1HN60K3-AP |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in TO-92 package
|
ST Microelectronics
|
STFI10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
STF24N60DM2 |
N-channel 600 V, 0.175 Ohm typ., 18 A FDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package
|
ST Microelectronics
|
S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
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Hamamatsu Photonics K.K.
|
STFI26NM60N |
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in I2PAKFP package N-channel 600 V, 0.135, 20 A MDmesh II Power MOSFET in PAKFP package
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ST Microelectronics STMicroelectronics
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STI24N60M2 STW24N60M2 STB24N60M2 STP24N60M2 |
N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus?low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
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STMicroelectronics
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IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET 16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET 3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET 2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET 2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET 2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET 19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET 7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET 1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
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Vishay Intertechnology, Inc. Intersil, Corp. VISHAY INTERTECHNOLOGY INC
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IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
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INTERSIL[Intersil Corporation]
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